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| sy semiconductors s henzhen sy semiconductors c o. ? ltd. eb series transistors eb1300 9 d ?? features o z high voltage capability x high speed switching ? wide soa ?? application o z fluorescent lamp x electron i c ballast ?? absolute maximum ratings (tc=2 5 ?? ) to - 220 npn parameter symbol value uni t collector ? base voltage v cbo 7 00 v collector ? emitter voltage v ceo 400 v emitter ? base voltage v ebo 9 v collector current i c 12 a total power dissipation p c 100 w junction temperat ure t j 150 ?? storage temperat ure tstg - 65 - 150 ?? ?? electronic characteristics (tc=25 ?? ) characteristics symbol test condition min max uni t collector ? base cutoff current i cbo v cb =7 00v 100 |a collector ? emitter cutoff current i ce o v ce =400v 250 |a collector ? emitter voltage v ceo i c =10 ma i b =0 400 v emitter ? base voltage v ebo i e =1ma i c =0 9 v collector ? emitter saturation voltage vcesat i c = 8 .0 a i b = 1.6 a 0. 8 v i c = 12 a i b =3 a 2.0 v base ? emitter saturation voltage vbesat i c =8 .0a i b =1.6a 1. 5 v dc current gain hfe v ce =5v i c =1 0 ma 7 v ce =5 v i c = 3 .0 a 10 5 0 v ce =5v i c = 12 .0 a 5 storage time ts v cc =5v i c =0. 5a 4 .0 10.0 |s falling time t f 1.0 |s diode forward voltage v f i f = 3 .0 a 2 v ?? classification of hfe and ts hfe 15 - 20 20 - 25 25 - 30 30 - 35 35 - 40 40 - 45 ts 4.0 - 5.0 5.0 - 6.0 6.0 - 7.0 7.0 - 8.0 8.0 - 9.0 9.0 - 10.0 sy semiconductors 1/3
sy semiconductors s henz hen sy semiconductors c o. ? ltd. eb series transistors eb1300 9d sy semiconductors 2/3 sy semiconductors s henzhen sy semiconductors c o. ? ltd. eb series transistors eb1300 9d symbol min nom max symbol min nom max a 3.5 4.5 5.0 l 12.5 13.5 14.5 b 1.25 1.35 1.5 l1 2.5 3.37 4.5 b1 0.75 0.85 0.955 d1 5.9 6.5 7.1 b 0.6 ? b 1.2 c 0.35 0.43 0.55 q 1.5 2.5 3.5 d 14.0 15. 5 16.5 q1 2.0 2.6 3.5 e 9.0 10.0 11.0 z 3.0 3.8 4.5 e 2.54 sy semiconductors 3 /3 |
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